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| BAT 64 Silicon Schottky Diodes Preliminary data * For low-loss, fast-recovery, meter protection, bias isolation and clamping applications * Integrated diffused guard ring * Low forward voltage Pin Configuration BAT 64-04 BAT64-05 BAT64-06 ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration BAT 64 BAT 64-04 BAT 64-05 BAT 64-06 63s 64s 65s 66s Q62702-A879 Q62702-A961 Q62702-A962 Q62702-A963 1=A 1=A 1=A 1=C 2=C 2=A 2=C 3=C 3 = C/A 3 = C/C 3 = A/A Package SOT-23 SOT-23 SOT-23 SOT-23 Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward current (t 10ms) Total Power dissipation Symbol Values 40 250 120 800 mW 250 150 - 55 ... + 150 495 355 C Unit V mA VR IF IFSM Ptot Tj Tstg RthJA RthJS Average forward current (50/60Hz, sinus) IFAV TS = 61 C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Jan-31-1997 BAT 64 Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 320 385 440 570 2 200 350 430 520 750 A VR = 25 V, TA = 25 C VR = 25 V, TA = 85 C Forward voltage VF mV V IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA AC Characteristics Diode capacitance CT 4 6 pF VR = 1 V, f = 1 MHz Forward Current IF = f(VF) Reverse current IR = f (VR) TA = Parameter Semiconductor Group 2 Jan-31-1997 BAT 64 Diode capacitance CT = f (VR) f = 1MHz Forward current IF = f (TA*;TS) * Package mounted on epoxy BAT 64 Forward current IF = f (TA*;TS) * Package mounted on epoxy BAT 64-04... (IF per diode) Semiconductor Group 3 Jan-31-1997 |
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